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Science and Technology

Tools for Next Generation Atomic Layer Deposition

The new ALD system solves the problem of Oxygen contamination and utilizes a large area high density hollow cathode source and a compact reactor design suitable for variety of applications.

About OkyayTech
Born from a passion for research in the area of atomic layer deposition (ALD), OkyayTech is building custom ALD tools for university researchers and industrial research groups. Our philosophy is to design tools that can make ALD technology accessible for all researchers. Therefore, in our tool design we emphasize reducing complexity and promoting easy use for our customers while providing best-in-class performance and customization driven by research needs.

Technology in a nutshellPLASMA ENHANCED ALD
Gallium Nitride (GaN) is the core material technology for Solid State Lighting, Battery and Power Industry, Telecommunications and Defense Electronics. Traditional GaN growth with MOCVD technique is expensive to scale up. In addition, the high growth temperatures of MOCVD technique (1000C) hinders compatibility and integration. ALD technique could be a low temperature (200C) and scalable candidate to grow GaN. To date III-Nitride growth by ALD suffers from Oxygen contamination. Even the most expensive tools on the market cannot completely eliminate this problem.
Enter OkyayTech Layerava® for the rescue. The tool utilizes a large area high density hollow cathode source and a compact reactor design. Below is a useful table showing some results demonstrating the advantage of breaking away from the old ICP plasma delivery paradigm.

  Fiji® with ICP Fiji® with hollow cathode OkyayTechALD® Large area hollow cathode
Film density at 200° C deposition 2.6 g/cm3 2.8 g/cm3 > 3.0 g/cm3
Al:N ratio (by XPS) for optimized conditions 1.34 1.13 1.0
Plasma exposure to achieve saturation > 40 seconds at 300 watts > 40 seconds at 300 watts 20 seconds at 100 watts
Optimized GPC at 200° C 0.6 Å at 300 watts 0.96 Å at 300 watts 1.1 Å at 100 watts

Reference:

“Real-time in situ ellipsometric monitoring of aluminum nitride film growth via hollow cathode plasma-assisted atomic layer deposition” A. Mohammad et. al. J. Vac. Sci. Technol. A 37 (2019) 020927.

 

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